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AG55 HBT MMICs Cascadable Gain Block
Sanland’ AG55 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400- 4000 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi- carrier as well as digital applications.
| 类型 | Downstream |
| 最小频率(GHz) | 0.4 |
| 最大频率(GHz) | 4.0 |
| 增益(dB) | 12.0 |
| S11(dB) | -18 |
| S22(dB） | -10 |
| NF(dB) | 6.5 |
| 电压(V) | 5 |
| 电流(mA) | 250 |
| 封装类型 | SOT-89 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes or No |
Major Applications
Electrical Characteristics for Application
| Parameter | Specification | Units | Notes | ||
| Min | Typ. | Max | |||
| Freq | 0.4 | 4.0 | GHz | ||
| Gain | 19 | 21 | 23 | dB | 850MHz |
| 14 | 15.5 | dB | 1960MHz | ||
| 13 | 14 | dB | 2700MHz | ||
| 12 | dB | 3500MHz | |||
| P-1dB | 26 | 24.5 | dBm | 850MHz | |
| 28 | dBm | 1960MHz | |||
| 27 | dBm | 2700MHz | |||
| 25.5 | dBm | 3500MHz | |||
| OIP3 | 40 | 44 | dBm | 850MHz | |
| 40 | 44 | dBm | 1960MHz | ||
| 45 | dBm | 2700MHz | |||
| 43 | dBm | 3500MHz | |||
| Input return loss | -10 | -15 | dB | 850MHz | |
| -17 | dB | 1960MHz | |||
| -13 | dB | 2700MHz | |||
| -18 | dB | 3500MHz | |||
| Output return loss | -10 | dB | |||
| Reverse Isolation | -25 | dB | |||
| NF | 5.0 | 6.5 | dB | ||
| Vs | 5.0 | 5.5 | V | ||
| IC | 115 | 126 | 140 | mA | |
| Test Conditions：Vs=5V ID=126mA Typ. OIP3 Tone Spacing=1MHz, Pout per ton=+5 dBm TL=25℃ ZS=ZL=50 Ohms | |||||
支持IPv6网络
