低噪声放大器 (LNA)

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低噪声放大器 (LNA)

AL33 GaAs MMIC Low Noise Amplifier

MMIC Low Noise Amplifier

AL33 GaAs MMIC Low Noise Amplifier

关键性能

● 0.4dB noise figure at 900MHz
● 35dBm Output IP3 at 900MHz
● Optimum use from 0.4GHz up to 1.5GHz
● Small package size: 2.0 x 2.0 x 0.75mm3
● Single 5V Supply
● ESD 250V HBM
● MSL: Level 1
● Share the same package and pin configuration with AL34 use from 1.5GHz to 2.4GHz

AL33 GaAs MMIC Low Noise Amplifier

Sanland’s AL33 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of 0.5um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 400MHz up to 1.5GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make the AL33 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA.

类型 Downstream
频率最小值(GHz) 0.4
频率最大值(GHz) 1.5
增益(dB) 19.4
S11(dB) -16
S22(dB -12
NF(dB) 0.4
电压(V) 5
电流(mA) 135
封装类型 QFN
RoHS Yes
Lead Free Yes
Halogen Free Yes or No

 

Major Applications

  • LNA for cellular infrastructure and other ultra low noise application.

 

Electrical Characteristics for Application

 

Parameter Specification Units Notes
Min Typ. Max
Freq 0.4   1.5 GHz  
Gain 17.5 20.3 21   800MHz
19.7 850MHz
19.4 900MHz
P-1dB 20 22.1     800MHz
20 22.1 850MHz
20 22.2 900MHz
OIP3 33 34.5     800MHz
33 34.8 850MHz
33 35 900MHz
Input return loss   -15 -10   800MHz
-15 -10 850MHz
-16 -10 900MHz
Output return loss   -12 -10   800MHz
-12 -10 850MHz
-12 -10 900MHz
NF   0.4 0.55   800MHz
0.4 0.55 850MHz
0.4 0.55 900MHz
Reverse Isolation   -28     800MHz
-27 850MHz
-27 900MHz
Vs   5 5.5 V  
IC 40 55 80 mA  
Test Conditions:VDD=5V, IDD=55mA Typ. OIP3 Tone Spacing=1MHz, Pout per ton=+5 dBm  TL=25℃, ZS=ZL=50 Ohms

 

 

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