低噪声放大器 (LNA)

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低噪声放大器 (LNA)

AL36 GaAs pHEMT MMIC Low Noise Amplifier

GaAs pHEMT MMIC Low Noise Amplifier

AL36 GaAs pHEMT MMIC Low Noise Amplifier

关键性能

● Ultra-low Evaluation Board NF: 0.30 dB @ 850 MHz, 0.40 dB @ 1850 MHz, 0.50 dB @ 2500 MHz, 0.75 dB @ 3600 MHz
● High OIP3 performance: >+34 dBm over 700 to 3800 MHz
● Adjustable supply current from 30 to 100 mA
● Flexible bias voltage: 3 to 5 V
● Temperature and process-stable active bias
● Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 C per JEDEC J-STD-020)

Sanland’s AL36 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of 0.25um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Quad-Flat-Non- Lead (QFN) package. The internal active bias circuitry provides stable performance over temperature and process variation. The device offers the ability to externally adjust supply current. Supply voltage is applied to the RFOUT/VDD pin through an RF choke inductor. The RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation. The AL36 operates in the frequency range of 0.7 to 3.8 GHz using a common layout and band-specific tunes.

类型 Downstream
频率最小值(GHz) 0.7
频率最大值(GHz) 3.8
增益(dB) 15.7
S11dB
-11
S22dB
-19
NF(dB) 0.75
电压(V) 3-5
电流(mA) 30-100
封装类型 QFN
RoHS Yes
Lead Free Yes
Halogen Free Yes or No

 

Major Applications

  • LTE, GSM, WCDMA, HSDPA macro and micro base stations
  • L and S band ultra low-noise receivers
  • Cellular repeaters, DAS and RRH/RRUs
  • High temperature transceiver applications to +105 °C

 


 

 

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