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关键性能
| ● 0.7-4.2 GHz Operational Bandwidth |
| ● Ultra low noise figure, 0.6dB NF @ 2.6 GHz |
| ● >20 dB gain across 0.7 to 4.2 GHz |
| ● Flat 2 dB gain variation across 2 to 4.2 GHz |
| ● Bias adjustable for linearity optimization |
| ● 33 dBm OIP3 at 55 mA IDD |
| ● MSL: Level 1 |
Sanland’s AL411 is a flat gain, high linearity, ultra-low noise amplifier in a micro 2.0 x 2.0 x 0.75mm3 8-pin DFN package. The LNA provides a gain flatness of 2dB (peak to peak) over a wide bandwidth from 2 to 4.2 GHz.
The 0.25um GaAs enhanced PHEMT technology is used to realize the low noise amplifier with low noise and high-linearity. It is packaged in a green / RoHS- compliant 2x2 mm industry standard package.
The internal active bias circuit provides stable temperature and process change performance. The LNA provides the ability to adjust the power current externally . The power supply voltage is applied to RFOUT/VDD pin through the inductance of RF choke.
| 类型 | Downstream |
| 频率最小值(GHz) | 0.6 |
| 频率最大值(GHz) | 4.2 |
| 增益(dB) |
22
|
| CSO(dBc) | -8.7 |
| CTB(dBc) | -19.8 |
| NF(dB) | 0.6 |
| 电压(V) | 5 |
| 电流(mA) | 65 |
| 封装类型 | DFN2*2_8L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes or No |
Major Applications
支持IPv6网络
