可级联单片微波放大器

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可级联单片微波放大器

SG850 high performance InGaP HBT MMIC amplifier

high performance MMIC amplifier

SG850 high performance InGaP HBT MMIC amplifier

关键性能

●  0.05-4G, Cascadable
●  Active Bias InGaP / GaAS HBT Amplifier 
●  Wideband Flat Gain to4GHz
●  IP3=40dBm@1218MHz
●  P1dB=23dBm@1218MHz
●  Single +5V Supply
●  1000V ESD, Class IC
●   MSL 1 moisture rating

 

SG850 high performance InGaP HBT MMIC amplifier

SG850 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration withan active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SG850 does not require a dropping resistor as compared to typical Darlington amplifiers. The SG850 product is designed for high linearity 5V gain block applications that require small size and minimal external components.

 

 

类型 Downstream
频率最小值(MHz) 45
频率最大值(MHz) 1218
增益(dB) 20
CSO(dBc) – 60
CTB(dBc) – 70
NF(dB) 3
电压(V) 5
电流(mA) 75
封装类型 SOT-89
RoHS Yes
Lead Free Yes
Halogen Free Yes or No

Major Applications

    • Cable Modem
    • FTTH (G-PON, GE-PON) 
    • Optical node
    • IF & Driver Amplifier 
    • Cellular, PCS, GMS, UMTS
    • Wireless Data, Satellite,Terminals

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